Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001)
Ist Teil von
Journal of crystal growth, 1994-10, Vol.143 (3), p.115-123
Ort / Verlag
Elsevier B.V
Erscheinungsjahr
1994
Link zum Volltext
Quelle
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
Beschreibungen/Notizen
Transmission electron microscopy has been used to investigate the accommodation of lattice mismatch and the threading mechanism of dislocations in GaSb films deposited at 420, 470 and 520°C by molecular beam epitaxy (MBE) on GaAs (001) substrate. The lattice mismatch was relieved by regular 90° dislocations generated during island growth of GaSb films. At high temperature, however, the lattice mismatch was partly accommodated by 60° dislocation arrays which induce a local tilt of GaSb film with respect to the substrate. Even in the best case of misfit accommodation by very regular 90° dislocations, the density of threading dislocations reaches 1 × 10
10 cm
-2. The main source of threading dislocations is attributed to the coalescence of randomly distributed GaSb islands. In particular, at low temperature many 90° dislocations thread directly to the film surface, which is explained by the difference of 90° dislocation spacings in two coalesced islands.