Details

Autor(en) / Beteiligte

• Li, Wenqing
• Liao, Lei
• Xiao, Xiangheng
• Zhao, Xinyue
• Dai, Zhigao
• Guo, Shishang
• Wu, Wei
• Shi, Ying
• Xu, Jinxia
• Ren, Feng
• Jiang, Changzhong

Titel

Modulating the threshold voltage of oxide nanowire field-effect transistors by a Ga^＋ ion beam

Ist Teil von

• Nano research, 2014-11, Vol.7 (11), p.1691-1698

Ort / Verlag

Heidelberg: Tsinghua University Press

Erscheinungsjahr

2014

Link zum Volltext

Quelle

SpringerLink (Online service)

Beschreibungen/Notizen

• In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga^＋ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowire field-effect transistors （FETs） shift in the negative gate voltage direction after Ga^＋ ion irradiation. Smaller threshold voltages, achieved by Ga^＋ ion irradiation, are required for high-performance and low-voltage operation. The threshold voltage shift can be attributed to the degradation of surface defects caused by Ga＋ ion irradiation. After irradiation, the current on/off ratio declines slightly, but is still close to -106. The results indicate that Ga^＋ ion beam irradiation plays a vital role in improving the performance of oxide nanowire FETs.