Details

Autor(en) / Beteiligte

• Feng, ZhiHong
• Wang, JingJing
• He, ZeZhao
• Dun, ShaoBo
• Yu, Cui
• Liu, JinLong
• Zhang, PingWei
• Guo, Hui
• Li, ChengMing
• Cai, ShuJun

Titel

Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Ist Teil von

• Science China. Technological sciences, 2013-04, Vol.56 (4), p.957-962

Ort / Verlag

Heidelberg: SP Science China Press

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Metal-semiconductor field effect transistors （MESFETs） were fabricated on H-terminated polycrystalline diamond.The DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA/mm at a gate-source voltage of 6 V,and a maximum transconductance of 20 mS/mm at a gate-source voltage of 1.5 V.The small signal S-parameters of MESFET with 2 100 m gate width and 2 m gate length were measured.An extrinsic cut-off frequency （fT） of 1.7 GHz and the maximum oscillation frequency （fmax） of 2.5 GHz were obtained,which was the first report on diamond MESFETs with RF characteristics in China.