Details

Autor(en) / Beteiligte

• Yang, M.D.
• Chen, Y.P.
• Shu, G.W.
• Shen, J.L.
• Hung, S.C.
• Chi, G.C.
• Lin, T.Y.
• Lee, Y.C.
• Chen, C.T.
• Ko, C.H.

Titel

Hot carrier photoluminescence in InN epilayers

Ist Teil von

• Applied physics. A, Materials science & processing, 2008, Vol.90 (1), p.123-127

Ort / Verlag

Berlin/Heidelberg: Springer-Verlag

Erscheinungsjahr

2008

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The energy relaxation of electrons in InN epilayers is investigated by excitation- and electric field-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature of the hot carriers. It was found that the electron temperature variation can be explained by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The LO-phonon lifetime is fitted to be 0.89 ps, which is higher than the theoretical phonon lifetime. This deviation is attributed to the presence of the non-equilibrium hot-phonon effects.