Details

Autor(en) / Beteiligte

• Ji, Hai-Ming
• Yang, Tao
• Cao, Yu-Lian
• Ma, Wen-Quan
• Cao, Qing
• Chen, Liang-Hui

Titel

Theoretical analysis of modal gain in p-doped 1.3 μm InAs/GaAs quantum dot lasers

Ist Teil von

• Physica status solidi. C, 2009-04, Vol.6 (4), p.948-951

Ort / Verlag

Berlin: WILEY-VCH Verlag

Erscheinungsjahr

2009

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A theoretical study of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is in a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)