Details

Autor(en) / Beteiligte

• Barkalov, O. I.
• Kolesnikov, A. I.
• Antonov, V. E.
• Ponyatovsky, E. G.
• Dahlborg, U.
• Dahlborg, M.
• Hannon, A.

Titel

Bulk Amorphous GaSb Semiconductors Prepared by Thermobaric Treatment: Formation and Properties

Ist Teil von

• physica status solidi (b), 1996-11, Vol.198 (1), p.491-496

Ort / Verlag

Berlin: WILEY-VCH Verlag

Erscheinungsjahr

1996

Link zum Volltext

Quelle

Wiley Online Library Journals Frontfile Complete

Beschreibungen/Notizen

• The multistage process of solid state amorphization and subsequent crystallization of the quenched “white tin” high pressure phase of Ga‐Sb alloys containing 20 to 80 at% Sb was studied at ambient pressure by differential scanning calorimetry. The heats of both amorphization and crystallization were exothermic and equal to (3.5 ± 0.5) and (8.3 ± 1.0) kJ/mol, respectively. Formation of the bulk amorphous alloys free of any crystalline inclusions was observed for compositions with 47.5 to 52.5 at% Sb. The structure of the amorphous GaSb produced by solid state amorphization was studied by neutron diffraction. It is found to be nearly identical to that of a sample prepared earlier by sputtering.