Details

Autor(en) / Beteiligte

• Iost, Rodrigo M.
• Crespilho, Frank N.
• Zuccaro, Laura
• Yu, Hak Ki
• Wodtke, Alec M.
• Kern, Klaus
• Balasubramanian, Kannan

Titel

Enhancing the Electrochemical and Electronic Performance of CVD‐Grown Graphene by Minimizing Trace Metal Impurities

Ist Teil von

• ChemElectroChem, 2014-12, Vol.1 (12), p.2070-2074

Ort / Verlag

Weinheim: WILEY‐VCH Verlag

Erscheinungsjahr

2014

Link zum Volltext

Quelle

Wiley Online Library - AutoHoldings Journals

Beschreibungen/Notizen

• The presence of unwanted impurities in graphene is known to have a significant impact on its physical and chemical properties. Similar to carbon nanotubes, any trace metals present in graphene will affect the electrocatalytic properties of the material. Here, we show by direct electroanalysis that traces of copper still remain in transferred CVD (chemical vapor deposition)‐grown graphene (even after the usual copper etching process) and strongly influence its electrochemical properties. Subsequently, we use a real‐time electrochemical etching procedure to remove more than 90 % of the trace metal impurities, with a clear improvement in both the electrochemical and electronic‐transport properties of monolayer graphene. Parasitic electrocatalytic activity can be completely excluded in monolayer CVD‐grown graphene by using an in situ electrochemical etching strategy for removing trace metal impurities. This result paves the way for a clear improvement in the electronic transport properties of graphene (CVD=chemical vapor deposition).