Details

Autor(en) / Beteiligte

• Liu, Xinke
• Zhou, Jie
• Jiang, Zhongwei
• Huang, Zheng
• Li, Bo
• Ma, Zhengweng
• Yang, Yongkai
• Huang, Yeying
• Zhang, Yating
• Botcha, V. Divakar
• Chung, Ren‐Jei
• Liang, Jiehao
• Li, Xiaohua
• Li, Yu
• He, Wei

Titel

Monolayer Mo 1− x − y Re x W y S 2 ‐Based Photodetectors Grown by Chemical Vapor Deposition

Ist Teil von

• Advanced electronic materials, 2024-03, Vol.10 (3)

Erscheinungsjahr

2024

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Abstract The utilization of alloyed 2D transition metal dichalcogenides (TMDs) has become a pivotal approach for addressing challenges in material applications. The judicious selection of dopant constituents offers a potent means to finely modulate the materials' bandgap, consequently broadening the potential applications of 2D materials. In the context of an investigation, Mo 1− x − y Re x W y S 2 is successfully synthesized using chemical vapor deposition. With a bandgap of 1.33 eV, this material exhibits promising prospects for application in the realm of optoelectronics. This advancement enables the fabrication of the Mo 1− x − y Re x W y S 2 photodetector. The rigorous testing and analysis of photoelectric performance reveal significant improvements in both responsivity and response speed compared to analogous detectors. This accomplishment not only furnishes a novel paradigm for the advancement of photodetectors but also contributes fresh insights to the domain of alloyed 2D TMDs.