Details

Autor(en) / Beteiligte

• Chen, Wei
• Wang, Danhao
• Wang, Weiyi
• Kang, Yang
• Liu, Xin
• Fang, Shi
• Li, Liuan
• Luo, Yuanmin
• Liang, Kun
• Liu, Yuying
• Luo, Dongyang
• Memon, Muhammad Hunain
• Yu, Huabin
• Gu, Wengang
• Liu, Zhenghui
• Hu, Wei
• Sun, Haiding

Titel

Manipulating Surface Band Bending of III‐Nitride Nanowires with Ambipolar Charge‐Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication (Adv. Mater. 1/2024)

Ist Teil von

• Advanced materials (Weinheim), 2024-01, Vol.36 (1), p.n/a

Erscheinungsjahr

2024

Quelle

Wiley Online Library All Journals

Beschreibungen/Notizen

• Photoelectrodes In article number 2307779, Haiding Sun and co‐workers report an electrolyte‐assisted photoelectrode, composed of p‐type‐AlGaN‐nanowire arrays grown on n‐type silicon, which demonstrates spectrally distinctive bipolar photoresponse with a controllable polarity‐switching point over a wide spectrum. Importantly, they achieve reprogrammable photoswitching logic gates in such a single photoelectrode, aiming for the realization of encrypted optical wireless communication and multifunctional integrated‐photonics systems.