Details

Autor(en) / Beteiligte

• Loitsch, Bernhard
• Rudolph, Daniel
• Morkötter, Stefanie
• Döblinger, Markus
• Grimaldi, Gianluca
• Hanschke, Lukas
• Matich, Sonja
• Parzinger, Eric
• Wurstbauer, Ursula
• Abstreiter, Gerhard
• Finley, Jonathan J.
• Koblmüller, Gregor

Titel

Semiconductor Nanowires: Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse-Reaction Growth (Adv. Mater. 13/2015)

Ist Teil von

• Advanced materials (Weinheim), 2015-04, Vol.27 (13), p.2125-2125

Ort / Verlag

Blackwell Publishing Ltd

Erscheinungsjahr

2015

Link zum Volltext

Quelle

Wiley Blackwell Single Titles

Beschreibungen/Notizen

• On page 2195, G. Koblmüller and co‐workers demonstrate a unique reverse‐reaction growth scheme to realize ultrathin GaAs nanowires epitaxially on Si. Correlated structural and optical experiments reveal huge blue‐shifted photoluminescence (up to ∼100 meV) with decreasing nanowire diameter, in sound agreement with theoretical calculations of radial quantum confinement. Cover by Christoph Hohmann, Nanosystems Initiative Munich (NIM).