Details

Autor(en) / Beteiligte

• Loi, M. A.
• Rost-Bietsch, C.
• Murgia, M.
• Karg, S.
• Riess, W.
• Muccini, M.

Titel

Tuning Optoelectronic Properties of Ambipolar Organic Light- Emitting Transistors Using a Bulk-Heterojunction Approach

Ist Teil von

• Advanced functional materials, 2006-01, Vol.16 (1), p.41-47

Ort / Verlag

Weinheim: WILEY-VCH Verlag

Erscheinungsjahr

2006

Quelle

Wiley Online Library Journals Frontfile Complete

Beschreibungen/Notizen

• Bulk‐heterojunction engineering is demonstrated as an approach to producing ambipolar organic light‐emitting field‐effect transistors with tunable electrical and optoelectronic characteristics. The electron and hole mobilities, as well as the electroluminescence intensity, can be tuned over a large range by changing the composition of a bimolecular mixture consisting of α‐quinquethiophene and N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic‐diimide. Time‐resolved photoluminescence spectroscopy reveals that the phase segregation of the two molecules in the bulk heterojunction and their electronic interaction determine the optoelectronic properties of the devices. The results presented show that the bulk‐heterojunction approach, which is widely used in organic photovoltaic cells, can be successfully employed to select and tailor the functionality of field‐effect devices, including ambipolar charge transport and light emission. The electrical and optoelectronic properties of ambipolar organic light‐emitting field‐effect transistors (see Figure) are tuned by controlling the ratio of the electron‐ and hole‐transport materials in a bulk heterojunction. Time‐resolved photoluminescence spectroscopy and confocal microscopy reveal that the structure and microscopic composition of the heterojunction determine the optoelectronic properties of the devices.