Details

Autor(en) / Beteiligte

• Alexander N. Chaika Olga V. Molodtsova Alexei A. Zakharov Dmitry Marchenko Jaime Sanchez-Barrig Andrei Varykhalov Igor V. Shvets Victor Yu. Aristov

Titel

Continuous wafer-scale graphene on cubic-SiC（O01）

Ist Teil von

• 纳米研究：英文版, 2013, Vol.6 (8), p.562-570

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The atomic and electronic structure of graphene synthesized on commercially available cubic-SiC（001）/Si（001） wafers have been studied by low energy electron microscopy （LEEM）, scanning tunneling microscopy （STM）, low energy electron diffraction （LEED）, and angle resolved photoelectron spectroscopy （ARPES）. LEEM and STM data prove the wafer-scale continuity and uniform thickness of the graphene overlayer on SIC（001）. LEEM, STM and ARPES studies reveal that the graphene overlayer on SIC（001） consists of only a few monolayers with physical properties of quasi-freestanding graphene. Atomically resolved STM and micro-LEED data show that the top graphene layer consists of nanometer-sized domains with four different lattice orientations connected through the 〈110〉-directed boundaries. ARPES studies reveal the typical electron spectrum of graphene with the Dirac points close to the Fermi level. Thus, the use of technologically relevant SiC（001）/Si（001） wafers for graphene fabrication repre-sents a realistic way of bridging the gap between the outstanding properties of graphene and their applications.