Chinese physics C, 2011-09, Vol.35 (9), p.885-889
2011
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- Autor(en) / Beteiligte
- Titel
- Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations
- Ist Teil von
- Chinese physics C, 2011-09, Vol.35 (9), p.885-889
- Ort / Verlag
- IOP Publishing
- Erscheinungsjahr
- 2011
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0× 10^17 or 1.2× 10^18 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0× 10^11, 1.0× 10^12, 5.0× 10^12 ions/cm2, or with 308 MeV Xe-ions to 1.0× 10^12, 1.0× 10^13, 1.0× 10^14 ions/cm2, respectively. Then the samples were investigated using micro-Raman spectroscopy. Prom the obtained Raman spectra, we deduced that Si-C bonds and sp2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the fluence. The possible modification process of C-doped discussed. inclusion size decreased with increasing the irradiation a-SiO2 under swift heavy ion irradiations was briefly