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A 0.18 μm CMOS 3-5 GHz broadband flat gain low noise amplifier
Ist Teil von
Journal of semiconductors, 2010 (2), p.38-44
Erscheinungsjahr
2010
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
A 3-5 GHz broadband flat gain differential low noise amplifier（LNA） is designed for the impulse radio ultra-wideband（IR-UWB） system.The gain-flatten technique is adopted in this UWB LNA.Serial and shunt peaking techniques are used to achieve broadband input matching and large gain-bandwidth product（GBW）.Feedback networks are introduced to further extend the bandwidth and diminish the gain fluctuations.The prototype is fabricated in the SMIC 0.18μm RF CMOS process.Measurement results show a 3-dB gain bandwidth of 2.4-5.5 GHz with a maximum power gain of 13.2 dB.The excellent gain flatness is achieved with±0.45 dB gain fluctuations across 3-5 GHz and the minimum noise figure（NF） is 3.2 dB over 2.5-5 GHz.This circuit also shows an excellent input matching characteristic with the measured S11 below-13 dB over 2.9-5.4 GHz.The input-referred 1-dB compression point（IP1dB） is-11.7 dBm at 5 GHz.The differential circuit consumes 9.6 mA current from a supply of 1.8 V.