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A capacitance study of GaAs1−xPx : Te. x > 0.2, obtained by vapor phase epitaxy, has revealed two DX centers, characterized by thermal activation energies ΔEA = 0.18 eV and ΔEB = 0.39 eV. and photoionization energies 0.6 eV and 1.1 eV, respectively. Both traps show strong non-exponential behavior in thermal emission and capture processes. It is shown that correct parameter values for DX centers can be determined from measurements of the transition region width. This method, which allows us to circumvent alloy effects, has been used to study DX center parameters as a function of the phosphorus content. It is demonstrated that the level B is linked to the X minimum, and that the barrier height for electron capture at this trap, with respect to the indirect minimum, is independent of alloy composition.