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The demand for inexpensive, efficient photoelectrosensitive materials for photosensing applications still exists to replace the expensive and highly intricate systems. Herein, we have designed an SnS2-/rGO-decorated 2D-TaS2 heterostructure for broadband photodetector applications and also studied its photoelectrochemical properties. According to the photoelectrochemical measurements, the 2D-TaS2/SnS2–rGO heterostructure shows 10 times enhancement in the photocurrent density, i.e., 2.23 mA/cm2 at −0.98 V under light illumination, than that of the bare 2D-TaS2 which shows 0.25 mA/cm2 at −0.98 V. The electrochemical impedance spectroscopy analysis depicts a low charge transfer resistance (R ct) value, indicating that charge carrier migration is more preferred in the heterostructure, thus confirming higher activity toward photoelectrochemical applications. The applied bias to photon-to-current efficiency, ABPE % for heterostructure 2D-TaS2/SnS2–rGO, is nearly 33 times higher than that of 2D-TaS2. Furthermore, we have designed an efficient photodetector based on the 2D-TaS2/SnS2–rGO heterostructure, showing photoresponse over a wide range (200–1550 nm). The fabricated heterostructure exhibits nearly 10 times higher photoelectrocatalytic performance than that of the 2D-TaS2 in the ultraviolet (UV)–near IR regime and shows a responsivity of 1.79 mA W–1 in the UV regime. The transient photoresponse measurements confirm the stability of the photocatalyst with a rise and fall time of ∼3 s. These results establish the feasibility of fabricating the 2D-TaS2/SnS2–rGO heterostructure at room temperature for broadband photodetection.
Sprache
Englisch
Identifikatoren
ISSN: 2574-0970
eISSN: 2574-0970
DOI: 10.1021/acsanm.3c04745
Titel-ID: cdi_acs_journals_10_1021_acsanm_3c04745
Format
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