Details

Autor(en) / Beteiligte

• Lee, Gieop
• Cha, An-Na
• Cho, Sea
• Chung, Jeong Soo
• Moon, Young-Boo
• Ha, Jun-Seok

Titel

Heteroepitaxial Growth of Thick α‑Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Ist Teil von

• Crystal growth & design, 2024-01, Vol.24 (1), p.205-213

Ort / Verlag

American Chemical Society

Erscheinungsjahr

2024

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this study, halide vapor phase epitaxy with flow modulation epitaxy (FME) was used to grow a 10 μm thick single-crystalline α-Ga2O3 epilayer on a sapphire substrate. By optimizing the interval time of the gas, highly crystalline thick α-Ga2O3 epitaxial layers can be grown without any cracks. The as-grown α-Ga2O3 was evaluated using scanning electron microscopy and atomic force microscopy to analyze the improvement in the surface morphology and roughness of the epitaxial layer, while X-ray diffraction was used to evaluate the crystallinity. Under optimized O2 FME conditions, the thick α-Ga2O3 film exhibited a lower full width at half-maximum (fwhm) of 779 arcsec for the (101̅4) plane compared to the (101̅4) plane fwhm values of 1137 and 925 arcsec obtained for the reference and HCl FME conditions, respectively. The results indicated that the α-Ga2O3 epitaxial layer grown under the O2 FME conditions exhibited the best quality. This confirms that the current approach to growing high-quality α-Ga2O3 thick films is stable.